The Impact of In-situ Hydrogen Plasma Passivation Prior to ALD HfO2 Deposition on the Electrical Properties of ICP Etched P-type InGaAs (110) MOSCAPs

Fu, Y.-C., Li, X. , Peralagu, U. , Millar, D., Steer, M., Zhou, H., Droopad, R. and Thayne, I.G. (2017) The Impact of In-situ Hydrogen Plasma Passivation Prior to ALD HfO2 Deposition on the Electrical Properties of ICP Etched P-type InGaAs (110) MOSCAPs. 48th IEEE Semiconductor Interface Specialists Conference (SISC 2017), San Diego, CA, USA, 6-9 Dec 2017.

Fu, Y.-C., Li, X. , Peralagu, U. , Millar, D., Steer, M., Zhou, H., Droopad, R. and Thayne, I.G. (2017) The Impact of In-situ Hydrogen Plasma Passivation Prior to ALD HfO2 Deposition on the Electrical Properties of ICP Etched P-type InGaAs (110) MOSCAPs. 48th IEEE Semiconductor Interface Specialists Conference (SISC 2017), San Diego, CA, USA, 6-9 Dec 2017.

Full text not currently available from Enlighten.

Abstract

No abstract available.

Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Fu, Mr Yen-Chun and Steer, Dr Matthew and Li, Dr Xu and Zhou, Dr Haiping and Thayne, Professor Iain and Millar, Mr David and Peralagu, Mr Uthayasankaran
Authors: Fu, Y.-C., Li, X., Peralagu, U., Millar, D., Steer, M., Zhou, H., Droopad, R., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Related URLs:

University Staff: Request a correction | Enlighten Editors: Update this record