In-situ Auger Spectroscopy Analysis of an Atomic Layer Etching Process for GaN/AlGaN-based Power Device Fabrication

Li, X. , Cho, S.-J., Floros, K., Hemakumara, D., Zhou, H., Guiney, I., Moran, D. , Humphreys, C. and Thayne, I.G. (2018) In-situ Auger Spectroscopy Analysis of an Atomic Layer Etching Process for GaN/AlGaN-based Power Device Fabrication. UKNC Winter Conference 2018, Manchester, UK, 10-11 Jan 2018.

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Abstract

No abstract available.

Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Zhou, Dr Haiping and Cho, Dr Sungjin and Thayne, Professor Iain and Moran, Dr David and Hemakumara, Miss Dilini and Floros, Mr Konstantinos
Authors: Li, X., Cho, S.-J., Floros, K., Hemakumara, D., Zhou, H., Guiney, I., Moran, D., Humphreys, C., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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