A Study of In-Situ Auger Spectroscopic Surface Analysis in Development of Atomic Layer Etch for GaN/AlGaN Based Power Device Fabrication

Li, X. , Zhou, H., Hemakumara, D., Cho, S.-J., Floros, K., Moran, D. and Thayne, I. (2018) A Study of In-Situ Auger Spectroscopic Surface Analysis in Development of Atomic Layer Etch for GaN/AlGaN Based Power Device Fabrication. 10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials / 11th International Conference on Plasma-Nano Technology & Science (ISPlasma2018 / IC-PLANTS2018), Nagoya, Japan, 4-8 March 2018.

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Abstract

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Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Cho, Dr Sungjin and Zhou, Dr Haiping and Thayne, Professor Iain and Moran, Dr David and Floros, Mr Konstantinos and Hemakumara, Miss Dilini
Authors: Li, X., Zhou, H., Hemakumara, D., Cho, S.-J., Floros, K., Moran, D., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
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