Optimization of Atomic Layer Etch Process for Fabrication of Dual Barrier GaN-Based Power Device Using In-Situ Auger Spectrometric Surface Analysis

Li, X. , Zhou, H., Flores, K., Cho, S.-J., Hemakumara, D., Moran, D. and Thayne, I. (2018) Optimization of Atomic Layer Etch Process for Fabrication of Dual Barrier GaN-Based Power Device Using In-Situ Auger Spectrometric Surface Analysis. AVS 18th International Conference on Atomic Layer Deposition (ALD 2018) and the 5th International Atomic Layer Etching Workshop (ALE 2018), Incheon, South Korea, 29 Jul-1 Aug 2018.

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Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Cho, Dr Sungjin and Zhou, Dr Haiping and Thayne, Professor Iain and Moran, Dr David and Hemakumara, Miss Dilini
Authors: Li, X., Zhou, H., Flores, K., Cho, S.-J., Hemakumara, D., Moran, D., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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