AlGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2018) AlGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance. In: 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, Spain, 23-25 Sep 2018, pp. 13-16. ISBN 9782874870521 (doi: 10.23919/EuMIC.2018.8539896)

Abstract

This paper reports a novel type of distributed gate (DG) HEMT fabricated using isolation by oxygen plasma. The technique results in planar devices with low gate leakage currents of only 1.3 μA/mm at -20 V gate voltage for devices with gate periphery of 1 mm. The DG-HEMT improves the thermal performance by reducing the current drop at higher drain voltages leading to higher output powers.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Wasige, Professor Edward and Elksne, Mrs Maira and Al-Khalidi, Dr Abdullah
• Authors: Elksne, M., Al-Khalidi, A., and Wasige, E.
• College/School: College of Science and Engineering > School of Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISBN: 9782874870521
• Published Online: 19 November 2018
• Copyright Holders: Copyright © 2018 EuMA
• First Published: First published in Proceedings of the 2018 13th European Microwave Integrated Circuits Conference (EuMIC): 13-16
• Publisher Policy: Reproduced in accordance with the publisher copyright policy