AlGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2018) AlGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance. In: 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, Spain, 23-25 Sep 2018, pp. 13-16. ISBN 9782874870521 (doi:10.23919/EuMIC.2018.8539896)

Elksne, M. , Al-Khalidi, A. and Wasige, E. (2018) AlGaN/GaN HEMT with Distributed Gate for Improved Thermal Performance. In: 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, Spain, 23-25 Sep 2018, pp. 13-16. ISBN 9782874870521 (doi:10.23919/EuMIC.2018.8539896)

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Abstract

This paper reports a novel type of distributed gate (DG) HEMT fabricated using isolation by oxygen plasma. The technique results in planar devices with low gate leakage currents of only 1.3 μA/mm at -20 V gate voltage for devices with gate periphery of 1 mm. The DG-HEMT improves the thermal performance by reducing the current drop at higher drain voltages leading to higher output powers.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Al-Khalidi, Dr Abdullah and Elksne, Maira
Authors: Elksne, M., Al-Khalidi, A., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:9782874870521
Published Online:19 November 2018
Copyright Holders:Copyright © 2018 EuMA
First Published:First published in Proceedings of the 2018 13th European Microwave Integrated Circuits Conference (EuMIC): 13-16
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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