A magnetic shift register with out-of-plane magnetized layers

Mansell, R., Beguivin, A., Fernández-Pacheco, A. , Lee, J.H., Petit, D. and Cowburn, R.P. (2017) A magnetic shift register with out-of-plane magnetized layers. Nanotechnology, 28(38), 385201. (doi: 10.1088/1361-6528/aa7f63) (PMID:28699922)

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Using out-of-plane magnetized layers, a lateral shift register made from discrete elements is demonstrated. By carefully designing the in-plane shape of the elements which make up the shift register, both the position of nucleation of new domains and the coercivity of the element can be controlled. The dipole field from a neighboring element, placed tens of nanometers away, creates a bias field on the nucleation site, which can be used to create a NOT gate. By chaining these NOT gates together, a shift register can be created where data bits consisting of neighboring layers with aligned magnetization are propagated synchronously under a symmetric applied magnetic field. The operation of a 16 element shift register is shown, including field coupled data injection.

Item Type:Articles
Additional Information:This research is funded by the European Community under the Seventh Framework Program ERC Contract No. 247368: 3SPIN, and by EMRP JRP EXL04 SpinCal. The EMRP is jointly funded by the EMRP participating countries within EURAMET and the EU. AB acknowledges DTA funding from the EPSRC. AFP acknowledges support from the EPSRC Early Career Fellowship EP/M008517/1 and a Winton Fellowship.
Glasgow Author(s) Enlighten ID:Fernandez-Pacheco, Dr Amalio
Authors: Mansell, R., Beguivin, A., Fernández-Pacheco, A., Lee, J.H., Petit, D., and Cowburn, R.P.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Nanotechnology
Publisher:IOP Publishing
ISSN (Online):1361-6528
Copyright Holders:Copyright © 2017 R. Mansell et al.
First Published:First published in Nanotechnology 28(38):385201
Publisher Policy:Reproduced under a Creative Commons License

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