Simulation of GaAs 3-D pixel detectors

Mathieson, K., Bates, R., Meikle, A., O'Shea, V. , Passmore, M.S., Rahman, M. and Smith, K.M. (2001) Simulation of GaAs 3-D pixel detectors. Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment, 466(1), 194 -201. (doi:10.1016/S0168-9002(01)00845-2)

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Publisher's URL: http://dx.doi.org/10.1016/S0168-9002(01)00845-2

Abstract

The performance of an architecture for X-ray pixel detectors is discussed. The three-dimensional (3-D) structure has electrodes which penetrate the bulk of the detector medium allowing low- bias, high-speed operation along with improved charge collection efficiency. We use the modelling package MEDICI to simulate epitaxial gallium arsenide 3-D detectors. This includes an analysis of charge transport and signal formation, with details of the expected charge collection efficiencies. These detectors may be fabricated by a number of means including dry etching. The effect of dry-etch damage on detector performance is analysed as this is potentially an important factor.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:O'Shea, Professor Val and Mathieson, Dr Keith and Smith, Professor Kenway and Bates, Dr Richard
Authors: Mathieson, K., Bates, R., Meikle, A., O'Shea, V., Passmore, M.S., Rahman, M., and Smith, K.M.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Nuclear Instruments and Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
ISSN:0168-9002
ISSN (Online):1872-9576

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