Variability study of MWCNT local interconnects considering defects and contact resistances - Part II: impact of charge transfer doping

Chen, R. et al. (2018) Variability study of MWCNT local interconnects considering defects and contact resistances - Part II: impact of charge transfer doping. IEEE Transactions on Electron Devices, 65(11), pp. 4963-4970. (doi: 10.1109/TED.2018.2868424)

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Abstract

In this paper, the impact of charge transfer doping on the variability of multiwalled carbon nanotube (MWCNT) local interconnects is studied by experiments and simulations. We calculate the number of conducting channels of both metallic and semiconducting carbon nanotubes as a function of Fermi level shift due to doping based on the calculation of transmission coefficients. By using the MWCNT compact model proposed in Part I of this paper, we study the charge transfer doping of MWCNTs employing Fermi level shift to reduce the performance variability due to changes in diameter, chirality, defects, and contact resistance. Simulation results show that charge transfer doping can significantly improve MWCNT interconnect performance and variability by increasing the number of conducting channels of shells and degenerating semiconducting shells to metallic shells. As a case study on an MWCNT of 11 nm outer diameter, when the Fermi level shifts to 0.1 eV, up to ~80% of performance and standard deviation improvements are observed. Furthermore, a good match between experimental data and simulation results is observed, demonstrating the effectiveness of doping, the validity of the MWCNT compact model and proposed simulation methodology.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Amoroso, Dr Salvatore and Asenov, Professor Asen and Lee, Jaehyun and Georgiev, Dr Vihar
Authors: Chen, R., Liang, J., Lee, J., Georgiev, V. P., Ramos, R., Okuno, H., Kalita, D., Cheng, Y., Zhang, L., Pandey, R. R., Amoroso, S., Millar, C., Asenov, A., Dijon, J., and Todri-Sanial, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
ISSN (Online):1557-9646
Published Online:14 September 2018
Copyright Holders:Copyright © 2018 IEEE
First Published:First published in IEEE Transactions on Electron Devices 65(11): 4963-4970
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
701891CONNECTAsen AsenovEuropean Commission (EC)688612ENG - ENGINEERING ELECTRONICS & NANO ENG