Chen, R. et al. (2018) Variability study of MWCNT local interconnects considering defects and contact resistances - Part I: pristine MWCNT. IEEE Transactions on Electron Devices, 65(11), pp. 4955-4962. (doi: 10.1109/TED.2018.2868421)
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Abstract
In this paper, an enhanced compact model of multiwalled carbon nanotube (MWCNT) interconnects while considering defects and contact resistance is proposed. Based on the atomistic-level simulations, we have found that defect densities impact MWCNT resistance and ultimately their electrical performance. Furthermore, we have computed by atomistic-level simulations, the end-contact resistance between single-wall carbon nanotube and palladium (Pd) electrode to mimic the Pd–CNT end-contact resistance of each CNT shell in MWCNT. We have developed an advanced shell-by-shell model to include various parameters, such as shell diameter, shell chirality, defects on each shell, and connectivity of each shell to end contacts. We run Monte Carlo simulations to perform variability studies on each of these parameters to understand the electrical performance variation on MWCNT interconnects. We present the simulation results to convey the critical impact of variations. The impact of doping on MWCNT variability in the form of Fermi level shift will be addressed in Part II of this paper.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Amoroso, Dr Salvatore and Asenov, Professor Asen and Lee, Mr Jaehyun and Georgiev, Professor Vihar |
| Authors: | Chen, R., Liang, J., Lee, J., Georgiev, V. P., Ramos, R., Okuno, H., Kalita, D., Cheng, Y., Zhang, L., Pandey, R. R., Amoroso, S., Millar, C., Asenov, A., Dijon, J., and Todri-Sanial, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Transactions on Electron Devices |
| Publisher: | IEEE |
| ISSN: | 0018-9383 |
| ISSN (Online): | 1557-9646 |
| Published Online: | 14 September 2018 |
| Copyright Holders: | Copyright © 2018 IEEE |
| First Published: | First published in IEEE Transactions on Electron Devices 65(11): 4955-4962 |
| Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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