A new pixel sensor for uniformity control in ion implantation

Marchal, J., Al-Ajili, A., Scott, J. , Doak, D., Abdalla, M., Gwilliam, R., Frojdh, C., O'Shea, V. , Smith, K. and Rahman, M. (2003) A new pixel sensor for uniformity control in ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 206, 462 -466. (doi:10.1016/S0168-583X(03)00794-8)

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Abstract

The constantly growing research activities based on ion beams require an increasing precision in the control of the different ion beam parameters, such as beam uniformity and intensity. This paper presents a method of measuring the ion beam profile and intensity simultaneously, not easy with existing systems. The detector built comprises an array of 400 graphite pixels connected to ASIC (application specific integrated circuit) chips, that perform the integration and multiplexing of the charge deposited by the incoming ions into each pixel. The detector has been tested at the Surrey Ion Beam Centre and profiles of an argon beam at energies between 2 and 100 keV have been recorded. Total beam current has been monitored and compared to measurements taken with standard Faraday cups. Effects of secondary electron emission on the detector resolution and beam profile accuracy are discussed.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Scott, Dr Jamie and O'Shea, Professor Val and Al-Ajili, Dr Adwan and Doak, Mr David and Smith, Professor Kenway
Authors: Marchal, J., Al-Ajili, A., Scott, J., Doak, D., Abdalla, M., Gwilliam, R., Frojdh, C., O'Shea, V., Smith, K., and Rahman, M.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Research Group:Particle Physics Experiment
Journal Name:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
ISSN:0168-583X
Published Online:27 February 2003

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