MacKenzie, M., and Craven, A.J. (2000) Quantifying the oxidation of AlN using electron energy loss spectroscopy. Journal of Physics D: Applied Physics, 33(14), 1647 -1655. (doi:10.1088/0022-3727/33/14/303)
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Publisher's URL: http://dx.doi.org/10.1088/0022-3727/33/14/303
The successful exploitation of selective oxidation in III-V semiconducting devices depends on the ability to control the nature and extent of the oxidation process over distances of the order of 10 nm. This paper reports an analytical method capable of measuring the nature and extent of the oxidation process in AlN. Analytical electron microscopy and, in particular the near-edge fine structure present on characteristic edges in electron energy loss spectroscopy, is used to measure the extent of surface oxidation of AlN powder in air at room temperature. The oxidation was found to result in the formation of a surface oxidation layer of amorphous Al2O3 and the retention of some of the N produced, most likely in the form of N2 gas. Application of the technique to nanoscale analysis of semiconductors is considered.
|Glasgow Author(s) Enlighten ID:||MacKenzie, Dr Maureen and Craven, Professor Alan|
|Authors:||MacKenzie, M., and Craven, A.J.|
|Subjects:||Q Science > QC Physics|
|College/School:||College of Science and Engineering > School of Physics and Astronomy|
|Journal Name:||Journal of Physics D: Applied Physics|
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