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Quantifying the oxidation of AlN using electron energy loss spectroscopy

MacKenzie, M., and Craven, A.J. (2000) Quantifying the oxidation of AlN using electron energy loss spectroscopy. Journal of Physics D: Applied Physics, 33 (14). 1647 -1655. ISSN 0022-3727 (doi:10.1088/0022-3727/33/14/303)

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Publisher's URL: http://dx.doi.org/10.1088/0022-3727/33/14/303

Abstract

The successful exploitation of selective oxidation in III-V semiconducting devices depends on the ability to control the nature and extent of the oxidation process over distances of the order of 10 nm. This paper reports an analytical method capable of measuring the nature and extent of the oxidation process in AlN. Analytical electron microscopy and, in particular the near-edge fine structure present on characteristic edges in electron energy loss spectroscopy, is used to measure the extent of surface oxidation of AlN powder in air at room temperature. The oxidation was found to result in the formation of a surface oxidation layer of amorphous Al2O3 and the retention of some of the N produced, most likely in the form of N2 gas. Application of the technique to nanoscale analysis of semiconductors is considered.

Item Type:Article
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:MacKenzie, Dr Maureen and Craven, Prof Alan
Authors: MacKenzie, M., and Craven, A.J.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Journal of Physics D: Applied Physics
ISSN:0022-3727

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