Lateral grating DFB AlGaInN laser diodes for optical communications and atomic clocks

Najda, S.P. et al. (2017) Lateral grating DFB AlGaInN laser diodes for optical communications and atomic clocks. Journal of Physics: Conference Series, 810, 012053. (doi: 10.1088/1742-6596/810/1/012053)

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AlGaInN laser diode technology is of considerable interest for telecom applications and next generation atomic optical clocks based on Sr (by using 422nm & 461nm) and Rb at 420.2nm.Very narrow linewidths (<1MHz) are required for such applications. We report lateral gratings on AlGaInN ridge waveguide laser diodes to achieve a single wavelength device with a good side mode suppression ratio (SMSR) that is suitable for atomic clock and telecom applications.

Item Type:Articles
Additional Information:This work was supported by the European Union under the project E9776.
Glasgow Author(s) Enlighten ID:Odedina, Opeoluwa and Kelly, Professor Anthony
Authors: Najda, S.P., Slight, T., Perlin, P., Odedina, O., Suski, T., Marona, L., Stanczyk, S., Leszczyński, M., Wisniewski, P., Czernecki, R., Targowski, G., and Kelly, A.E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Physics: Conference Series
Publisher:IOP Publishing
ISSN (Online):1742-6596
Published Online:30 March 2017
Copyright Holders:Copyright © 2017 IOP Publishing Ltd
First Published:First published in Journal of Physics: Conference Series 810: 012053
Publisher Policy:Reproduced under a Creative Commons License

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