Random dopant-induced variability in Si-InAs nanowire tunnel FETs: a quantum transport simulation study

Carrillo-Nunez, H., Lee, J., Berrada, S., Medina-Bailon, C., Adamu-Lema, F., Luisier, M., Asenov, A. and Georgiev, V. P. (2018) Random dopant-induced variability in Si-InAs nanowire tunnel FETs: a quantum transport simulation study. IEEE Electron Device Letters, 39(9), pp. 1473-1476. (doi:10.1109/LED.2018.2859586)

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Abstract

In this letter, we report a quantum transport simu- lation study of the impact of Random Discrete Dopants (RDD)s on Si-InAs nanowire p-type Tunnel FETs. The band-to-band tunneling is simulated using the non-equilibrium Green’s func- tion formalism in effective mass approximation, implementing a two-band model of the imaginary dispersion. We have found that RDDs induce strong variability not only in the OFF-state but also in the ON-state current of the TFETs. Contrary to the nearly normal distribution of the RDD induced ON-current variations in conventional CMOS transistors, the TFET’s ON- currents variations are described by a logarithmic distribution. The distributions of other Figures of Merit (FoM) such as threshold voltage and subthreshold swing are also reported. The variability in the FoM is analysed by studying the correlation between the number and the position of the dopants.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Lee, Jaehyun and Medina Bailon, Miss Cristina and Berrada, Dr Salim and Carrillo-Nunez, Dr Hamilton and Georgiev, Dr Vihar and Adamu-Lema, Dr Fikru
Authors: Carrillo-Nunez, H., Lee, J., Berrada, S., Medina-Bailon, C., Adamu-Lema, F., Luisier, M., Asenov, A., and Georgiev, V. P.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Electron Device Letters
Publisher:IEEE
ISSN:0741-3106
ISSN (Online):1558-0563
Published Online:25 July 2018
Copyright Holders:Copyright © 2018 IEEE
First Published:First published in IEEE Electron Device Letters 39(9): 1473-1476
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
730291Quantum Electronics Device Modelling (QUANTDEVMOD)Vihar GeorgievEngineering and Physical Sciences Research Council (EPSRC)EP/P009972/1ENG - ENGINEERING ELECTRONICS & NANO ENG