Macdonald, D. A., Crawford, K. G., Tallaire, A., Issaoui, R. and Moran, D. A.J. (2018) Performance enhancement of Al2O3/H-diamond MOSFETs utilizing vacuum annealing and V2O5 as a surface electron acceptor. IEEE Electron Device Letters, 39(9), pp. 1354-1357. (doi: 10.1109/LED.2018.2856920)
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Abstract
We report on the performance enhancement of 250 nm gate-length H-diamond FETs through thermal treatment of devices at 400°C and the incorporation of V2O5 as a surface electron acceptor layer. Encapsulation of the H-diamond surface with V2O5 is found to increase the transfer doping efficiency and reduce device access resistance. A reduction in ohmic contact resistance and channel resistance beneath the gate after thermal treatment at 400°C was found to further reduce device onresistance and increase the maximum drain current and peak transconductance. These devices demonstrate the highest drain current (375 mA/mm) and transconductance (98 mS/mm) yet reported for H-diamond FETs of this gate length that incorporate an electron acceptor oxide layer.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | MACDONALD, DAVID and Crawford, Mr Kevin and Moran, Professor David |
Authors: | Macdonald, D. A., Crawford, K. G., Tallaire, A., Issaoui, R., and Moran, D. A.J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Electron Device Letters |
Publisher: | IEEE |
ISSN: | 0741-3106 |
ISSN (Online): | 1558-0563 |
Published Online: | 18 July 2018 |
Copyright Holders: | Copyright © 2018 IEEE |
First Published: | First published in IEEE Electron Device Letters 39(9):1354-1357 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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