Performance enhancement of Al2O3/H-diamond MOSFETs utilizing vacuum annealing and V2O5 as a surface electron acceptor

Macdonald, D. A., Crawford, K. G., Tallaire, A., Issaoui, R. and Moran, D. A.J. (2018) Performance enhancement of Al2O3/H-diamond MOSFETs utilizing vacuum annealing and V2O5 as a surface electron acceptor. IEEE Electron Device Letters, 39(9), pp. 1354-1357. (doi:10.1109/LED.2018.2856920)

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Abstract

We report on the performance enhancement of 250 nm gate-length H-diamond FETs through thermal treatment of devices at 400°C and the incorporation of V2O5 as a surface electron acceptor layer. Encapsulation of the H-diamond surface with V2O5 is found to increase the transfer doping efficiency and reduce device access resistance. A reduction in ohmic contact resistance and channel resistance beneath the gate after thermal treatment at 400°C was found to further reduce device onresistance and increase the maximum drain current and peak transconductance. These devices demonstrate the highest drain current (375 mA/mm) and transconductance (98 mS/mm) yet reported for H-diamond FETs of this gate length that incorporate an electron acceptor oxide layer.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Crawford, Mr Kevin and MACDONALD, DAVID and Moran, Dr David
Authors: Macdonald, D. A., Crawford, K. G., Tallaire, A., Issaoui, R., and Moran, D. A.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Electron Device Letters
Publisher:IEEE
ISSN:0741-3106
ISSN (Online):1558-0563
Published Online:18 July 2018
Copyright Holders:Copyright © 2018 IEEE
First Published:First published in IEEE Electron Device Letters 39(9):1354-1357
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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