Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures

Shangina, E.L., Smirnov, K.V., Morozov, D.V. , Kovalyuk, V.V., Gol’tsman, G.N., Verevkin, A.A. and Toropov, A.I. (2010) Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures. Bulletin of the Russian Academy of Sciences: Physics, 74(1), pp. 100-102. (doi:10.3103/S1062873810010272)

Full text not currently available from Enlighten.

Abstract

The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s - 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.

Item Type:Articles
Additional Information:This work was supported by Grant 2.1.1/4240 from the Ministry of Higher Education and Science of the Russian Federation, Program “The development of the Scientific potential of higher school,” and State Contract 02.740.11.0228 with the Federal Agency for Science and Innovations. The authors would like to thank Sergey Ryabchun for proofreading the manuscript.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Morozov, Dr Dmitry
Authors: Shangina, E.L., Smirnov, K.V., Morozov, D.V., Kovalyuk, V.V., Gol’tsman, G.N., Verevkin, A.A., and Toropov, A.I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Bulletin of the Russian Academy of Sciences: Physics
Publisher:Springer
ISSN:1062-8738
ISSN (Online):1934-9432

University Staff: Request a correction | Enlighten Editors: Update this record