Understanding electromigration in Cu-CNT composite interconnects: a multiscale electrothermal simulation study

Lee, J. et al. (2018) Understanding electromigration in Cu-CNT composite interconnects: a multiscale electrothermal simulation study. IEEE Transactions on Electron Devices, 65(9), pp. 3884-3892. (doi: 10.1109/TED.2018.2853550)

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Abstract

In this paper, we report a hierarchical simulation study of the electromigration problem in Cu-CNT composite interconnects. Our work is based on the investigation of the activation energy and self-heating temperature using a multiscale electro-thermal simulation framework. We first investigate the electrical and thermal properties of Cu-CNT composites, including contact resistances, using the Density Functional Theory and Reactive Force Field approaches, respectively. The corresponding results are employed in macroscopic electro-thermal simulations taking into account the self-heating phenomenon. Our simulations show that although Cu atoms have similar activation energies in both bulk Cu and Cu-CNT composites, Cu-CNT composite interconnects are more resistant to electromigration thanks to the large Lorenz number of the CNTs. Moreover, we found that a large and homogenous conductivity along the transport direction in interconnects is one of the most important design rules to minimize the electromigration.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Carrillo-Nunez, Dr Hamilton and Asenov, Professor Asen and Lee, Jaehyun and Berrada, Dr Salim and Sadi, Dr Toufik and Georgiev, Dr Vihar and Adamu-Lema, Dr Fikru
Authors: Lee, J., Berrada, S., Adamu-Lema, F., Carrillo-Nunez, H., Nagy, N., Georgiev, V., Sadi, T., Liang, J., Ramos, R., Carrillo-Nunez, H., Kalita, D., Lilienthal, K., Wislicenus, M., Pandey, R., Chen, B., Teo, K. B.K., Goncalves, G., Okuno, H., Uhlig, B., Todri-Sanial, A., Dijon, J., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Electron Devices
Publisher:Institute of Electrical and Electronics Engineers
ISSN:0018-9383
ISSN (Online):0018-9383
Published Online:23 July 2018
Copyright Holders:Copyright © 2018 IEEE
First Published:First published in IEEE Transactions on Electron Devices 65(9):3884-3892
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
701891CONNECTAsen AsenovEuropean Commission (EC)688612ENG - ENGINEERING ELECTRONICS & NANO ENG