Variability Study of High Current Junctionless Silicon Nanowire Transistors

Georgiev, V. P. , Dochioiu, A.-I., Adamu-Lema, F., Berrada, S., Mirza, M. M. , Paul, D. and Asenov, A. (2018) Variability Study of High Current Junctionless Silicon Nanowire Transistors. In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017, ISBN 9781538627723 (doi:10.1109/NMDC.2017.8350514)

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Abstract

Silicon nanowires have numerous potential applications, including transistors, memories, photovoltaics, biosensors and qubits [1]. Fabricating a nanowire with characteristics required for a specific application, however, poses some challenges. For example, a major challenge is that as the transistors dimensions are reduced, it is difficult to maintain a low off-current (Ioff) whilst simultaneously maintaining a high on-current (Ion). This can be the result of quantum mechanical tunnelling, short channel effects or statistical variability [2]. A variety of new architectures, including ultra-thin silicon-on-insulator (SOI), double gate, FinFETs, tri-gate, junctionless and gate all-around (GAA) nanowire transistors, have therefore been developed to improve the electrostatic control of the conducting channel. This is essential since a low Ioff implies low static power dissipation and it will therefore improve power management in the multi-billion transistor circuits employed globally in microprocessors, sensors and memories.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Mirza, Dr Muhammad M A and Paul, Professor Douglas and Asenov, Professor Asen and Berrada, Dr Salim and Dochioiu, Mr Alexandru-Iusti and Adamu-Lema, Dr Fikru and Georgiev, Dr Vihar
Authors: Georgiev, V. P., Dochioiu, A.-I., Adamu-Lema, F., Berrada, S., Mirza, M. M., Paul, D., and Asenov, A.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:9781538627723
Copyright Holders:Copyright © 2017 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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