Variability Study of High Current Junctionless Silicon Nanowire Transistors

Georgiev, V. P. , Dochioiu, A.-I., Adamu-Lema, F., Berrada, S., Mirza, M. M. , Paul, D. and Asenov, A. (2018) Variability Study of High Current Junctionless Silicon Nanowire Transistors. In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017, ISBN 9781538627723 (doi: 10.1109/NMDC.2017.8350514)

Abstract

Silicon nanowires have numerous potential applications, including transistors, memories, photovoltaics, biosensors and qubits [1]. Fabricating a nanowire with characteristics required for a specific application, however, poses some challenges. For example, a major challenge is that as the transistors dimensions are reduced, it is difficult to maintain a low off-current (Ioff) whilst simultaneously maintaining a high on-current (Ion). This can be the result of quantum mechanical tunnelling, short channel effects or statistical variability [2]. A variety of new architectures, including ultra-thin silicon-on-insulator (SOI), double gate, FinFETs, tri-gate, junctionless and gate all-around (GAA) nanowire transistors, have therefore been developed to improve the electrostatic control of the conducting channel. This is essential since a low Ioff implies low static power dissipation and it will therefore improve power management in the multi-billion transistor circuits employed globally in microprocessors, sensors and memories.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Mirza, Dr Muhammad M A and Paul, Professor Douglas and Asenov, Professor Asen and Berrada, Dr Salim and Dochioiu, Mr Alexandru-Iusti and Adamu-Lema, Dr Fikru and Georgiev, Professor Vihar
• Authors: Georgiev, V. P., Dochioiu, A.-I., Adamu-Lema, F., Berrada, S., Mirza, M. M., Paul, D., and Asenov, A.
• Subjects: Q Science > QC Physics
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISBN: 9781538627723
• Copyright Holders: Copyright © 2017 IEEE
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher