Yogeswaran, N., Navaraj, W.T., Gupta, S., Liu, F. , Vinciguerra, V., Lorenzelli, L. and Dahiya, R. (2018) Piezoelectric graphene field effect transistor pressure sensors for tactile sensing. Applied Physics Letters, 113(1), 014102. (doi: 10.1063/1.5030545)
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Abstract
This paper presents graphene field-effect transistor (GFET) based pressure sensors for tactile sensing. The sensing device comprises GFET connected with a piezoelectric metal-insulator-metal (MIM) capacitor in an extended gate configuration. The application of pressure on MIM generates a piezo-potential which modulates the channel current of GFET. The fabricated pressure sensor was tested over a range of 23.54–94.18 kPa, and it exhibits a sensitivity of 4.55 × 10−3 kPa−1. Further, the low voltage (∼100 mV) operation of the presented pressure sensors makes them ideal for wearable electronic applications.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Liu, Mr Fengyuan and Yogeswaran, Mr Nivasan and Dahiya, Professor Ravinder and Gupta, Shoubhik and Navaraj, Mr William |
Authors: | Yogeswaran, N., Navaraj, W.T., Gupta, S., Liu, F., Vinciguerra, V., Lorenzelli, L., and Dahiya, R. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Applied Physics Letters |
Publisher: | AIP Publishing |
ISSN: | 0003-6951 |
ISSN (Online): | 1077-3118 |
Copyright Holders: | Copyright © 2018 The Authors |
First Published: | First published in Applied Physics Letters 113(1): 014102 |
Publisher Policy: | Reproduced under a Creative Commons License |
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