Maricar, M. I., Khalid, A. , Dunn, G., Greedy, S., Thomas, D. W.P., Cumming, D.R.S. and Oxley, C.H. (2018) An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode oscillator. Microwave and Optical Technology Letters, 60(9), pp. 2144-2148. (doi: 10.1002/mop.31312)
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Abstract
The planar Gunn diode offers the potential of microwave, milli‐metric and THz‐based oscillators, which can be fabricated as part of a microwave monolithic integrated circuit (mmic). The paper develops an electrical representation of an aluminum gallium arsenide (AlGaAs) based planar Gunn diode with an active channel length of approximately 4 μm and width of 120 μm, embedded in an oscillator circuit. The work indicates a maximum simulated RF output power of +5 dBm compared with published experimental results of −19 dBm for similar diodes.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Cumming, Professor David and Khalid, Dr Ata-Ul-Habib |
Authors: | Maricar, M. I., Khalid, A., Dunn, G., Greedy, S., Thomas, D. W.P., Cumming, D.R.S., and Oxley, C.H. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Microwave and Optical Technology Letters |
Publisher: | Wiley |
ISSN: | 0895-2477 |
ISSN (Online): | 1098-2760 |
Published Online: | 11 August 2018 |
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