An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode oscillator

Maricar, M. I., Khalid, A. , Dunn, G., Greedy, S., Thomas, D. W.P., Cumming, D.R.S. and Oxley, C.H. (2018) An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode oscillator. Microwave and Optical Technology Letters, 60(9), pp. 2144-2148. (doi:10.1002/mop.31312)

Maricar, M. I., Khalid, A. , Dunn, G., Greedy, S., Thomas, D. W.P., Cumming, D.R.S. and Oxley, C.H. (2018) An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode oscillator. Microwave and Optical Technology Letters, 60(9), pp. 2144-2148. (doi:10.1002/mop.31312)

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Abstract

The planar Gunn diode offers the potential of microwave, milli‐metric and THz‐based oscillators, which can be fabricated as part of a microwave monolithic integrated circuit (mmic). The paper develops an electrical representation of an aluminum gallium arsenide (AlGaAs) based planar Gunn diode with an active channel length of approximately 4 μm and width of 120 μm, embedded in an oscillator circuit. The work indicates a maximum simulated RF output power of +5 dBm compared with published experimental results of −19 dBm for similar diodes.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Cumming, Professor David and Khalid, Dr Ata-ul-Habib
Authors: Maricar, M. I., Khalid, A., Dunn, G., Greedy, S., Thomas, D. W.P., Cumming, D.R.S., and Oxley, C.H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microwave and Optical Technology Letters
Publisher:Wiley
ISSN:0895-2477
ISSN (Online):1098-2760
Published Online:11 August 2018

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