Electrical and Chemical Analysis of the In-situ H2 Plasma Cleaned InGaSb-Al2O3 Interface

Millar, D. et al. (2017) Electrical and Chemical Analysis of the In-situ H2 Plasma Cleaned InGaSb-Al2O3 Interface. 48th IEEE Semiconductor Interface Specialists Conference (SISC 2017), San Diego, CA, USA, 6 -9 Dec 2017.

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Abstract

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Item Type:Conference or Workshop Item
Keywords:InGaSb, ALD, plasma passivation, MOSCAP, XPS.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Fu, Mr Yen-Chun and Steer, Dr Matthew and Li, Dr Xu and Thayne, Professor Iain and Millar, Mr David and Peralagu, Mr Uthayasankaran
Authors: Millar, D., Supardan, S., Peralagu, S., Sousa, M., Li, X., Dhanak, V. R., Fu, Y.-C., Steer, M., Schmid, H., Mitrovic, I. Z., and Thayne, I.G.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Micro- and Nanotechnology
Copyright Holders:Copyright © 2017 The Authors
Publisher Policy:Reproduced with the permission of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
703781INSIGHTIain ThayneEuropean Commission (EC)688784ENG - ENGINEERING ELECTRONICS & NANO ENG