Monolithically integrated InAsSb-based nBnBn heterostructure on GaAs for infrared detection

Xie, C., Pusino, V. , Khalid, A. , Craig, A. P., Marshall, A. and Cumming, D. R.S. (2018) Monolithically integrated InAsSb-based nBnBn heterostructure on GaAs for infrared detection. IEEE Journal of Selected Topics in Quantum Electronics, 24(6), 7800106. (doi:10.1109/JSTQE.2018.2828101)

Xie, C., Pusino, V. , Khalid, A. , Craig, A. P., Marshall, A. and Cumming, D. R.S. (2018) Monolithically integrated InAsSb-based nBnBn heterostructure on GaAs for infrared detection. IEEE Journal of Selected Topics in Quantum Electronics, 24(6), 7800106. (doi:10.1109/JSTQE.2018.2828101)

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Abstract

High operating temperature i nfrared photo detectors with multi -color function that are capable of monolithic integration are of increasing importance in developing the next generation of mid -IR imag e sensors. Applications of these sensors include defense, medical diagnosis, environmental and astronomical observations. We have investigated a novel InAsSb -based nBnBn heterostructure that combines a state -of-art InAsSb nBn detector with an InAsSb/GaSb heterojuncti on detector . At room temperature, r educti on in the dark current density of more than an order of magnitude was achieved compared to previously investigated InAsSb/GaSb heterojunction dete ctors . Electrical characterization from cryogenic temperatures to roo m temperature confirmed that the nBnBn device was diffusion limited for temperature s above 150K. O ptical measurements demonstrated that the nBnBn detector was sensitive in both the SWIR and MWIR wavelength range at room temperature . The specific detectivity (D*) of the competed nBnBn devices was calculated to be 8.6 × 10 8 cm · Hz 1/2 W -1 at 300K and approximately 1.0 × 10 10 cm · Hz 1/2 W -1 when cooled down to 200K (with 0.3V reverse bias and 1550nm illumination ). In addition, all photodetector layers were grown monolithically on GaAs active layers u sing the interfacial misfit array growth mode . Our results therefore pave the way for the development of new active pixel designs for monolithically integrated mid -IR imaging arrays.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Xie, Mr Chengzhi and Cumming, Professor David and Pusino, Mr Vincenzo and Khalid, Dr Ata-ul-Habib
Authors: Xie, C., Pusino, V., Khalid, A., Craig, A. P., Marshall, A., and Cumming, D. R.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Journal of Selected Topics in Quantum Electronics
Publisher:IEEE
ISSN:1077-260X
ISSN (Online):1558-4542
Published Online:24 April 2018
Copyright Holders:Copyright © 2018 IEEE
First Published:First published in IEEE Journal of Selected Topics in Quantum Electronics 24(6):7800106
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
588331Triple wavelength superspectral camera focal-plane array (SUPERCAMERA)David CummingEngineering and Physical Sciences Research Council (EPSRC)EP/J018678/1ENG - ENGINEERING ELECTRONICS & NANO ENG
6672319UK Quantum Technology Hub in Enhanced Quantum ImagingMiles PadgettEngineering and Physical Sciences Research Council (EPSRC)EP/M01326X/1S&E P&A - PHYSICS & ASTRONOMY