The role of hydrogen plasma power on surface roughness and carrier transport in transfer-doped H-diamond

Crawford, K. G. , Tallaire, A., Li, X. , Macdonald, D. A., Qi, D. and Moran, D. A.J. (2018) The role of hydrogen plasma power on surface roughness and carrier transport in transfer-doped H-diamond. Diamond and Related Materials, 84, pp. 48-54. (doi:10.1016/j.diamond.2018.03.005)

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Abstract

Surface transfer doping of diamond fundamentally requires termination of the diamond surface with a species such as hydrogen to allow the interfacial charge exchange required to establish surface conductivity. Here we show the effects of varied hydrogen plasma power on the roughness and conductivity of the (100) diamond surface. Prior to hydrogen termination, substrates were etched using tailored Cl2 + Ar and O2 + Ar chemistries to produce a very smooth surface of ~0.2 nm roughness average while also removing ~3.4 μm from the top surface as measured by Atomic Force Microscopy (AFM). Use of etching post polishing provides an effective means of producing smoother diamond surfaces with reduced crystal damage as opposed to scaife polishing alone. By producing nominally identical etched surfaces, a relationship between surface conductivity and hydrogen termination plasma power was observed. Using MoO3 as a surface acceptor material, Hall measurements were performed to examine sheet resistance, carrier density and mobility within the diamond. Increased surface conductivity due to enhanced hole mobility was observed at higher hydrogen plasma power conditions, despite an associated increase in roughness of the diamond surface.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Crawford, Kevin and Li, Dr Xu and MACDONALD, DAVID and Moran, Dr David
Authors: Crawford, K. G., Tallaire, A., Li, X., Macdonald, D. A., Qi, D., and Moran, D. A.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Diamond and Related Materials
Publisher:Elsevier
ISSN:0925-9635
ISSN (Online):1879-0062
Published Online:07 March 2018
Copyright Holders:Copyright © 2018 Elsevier B.V.
First Published:First published in Diamond and Related Materials 84: 48-54
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
450861Ultra short gate length diamond FETs for high power/high frequency applicationsDavid MoranEngineering and Physical Sciences Research Council (EPSRC)EP/E054668/1ENG - ENGINEERING ELECTRONICS & NANO ENG