Modelling and simulation of advanced semiconductor devices

Adamu-Lema, F., Duan, M. , Berrada, S., Lee, J., Al-Ameri, T. , Georgiev, V. and Asenov, A. (2017) Modelling and simulation of advanced semiconductor devices. ECS Transactions, 80(4), pp. 33-42. (doi: 10.1149/08004.0033ecst)

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Publisher's URL: http://dx.doi.org/10.1149/08004.0033ecst

Abstract

This paper presents a modelling and simulation study of advanced semiconductor devices. Different Technology Computer Aided Design approaches and models, used in nowadays research are described here. Our discussions are based on numerous theoretical approaches starting from first principle methods and continuing with discussions based on more well stablished methods such as Drift-Diffusion, Monte Carlo and Non-Equilibrium Green’s Function formalism.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Lee, Jaehyun and Duan, Meng and Georgiev, Dr Vihar and Asenov, Professor Asen and Al-Ameri, Talib Mahmood Ali and Berrada, Dr Salim and Adamu-Lema, Dr Fikru
Authors: Adamu-Lema, F., Duan, M., Berrada, S., Lee, J., Al-Ameri, T., Georgiev, V., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:ECS Transactions
Publisher:Electrochemical Society
ISSN:1938-5862
ISSN (Online):1938-6737
Copyright Holders:Copyright © 2018 The Electrochemical Society
First Published:First published in ECS Transactions 80(4):33-42
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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