Growth of Sputtered AlN Thin Film on Glass in Room Temperature

Lee, C.K., Placido, F., Cochran, S. and Kirk, K.J. (2002) Growth of Sputtered AlN Thin Film on Glass in Room Temperature. In: 2002 IEEE International Ultrasonics Symposium, Munich, Germany, 08-11 Oct 2002, pp. 1119-1122. ISBN 9780780375826 (doi: 10.1109/ULTSYM.2002.1192490)

Full text not currently available from Enlighten.

Abstract

Highly [002] oriented AlN thin film is deposited on glass substrate by RF magnetron sputtering method. The X-ray diffraction shows that the AlN thin film has grown in a preferred [002] orientation but other orientation starts to build up as the thickness increases. The surface morphology of the c-axis texture of the AlN thin film is obtained by scanning electron microscopy. The d/sub 33/ coefficient of the AlN thin film is measured using piezoresponse microscopy and the result obtained is 3.8pm/V.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Cochran, Professor Sandy
Authors: Lee, C.K., Placido, F., Cochran, S., and Kirk, K.J.
College/School:College of Science and Engineering > School of Engineering > Systems Power and Energy
ISSN:1051-0117
ISBN:9780780375826

University Staff: Request a correction | Enlighten Editors: Update this record