Eblabla, A., Li, X. , Wallis, D.J., Guiney, I. and Elgaid, K. (2018) High-performance MMIC inductors for GaN-on-low-resistivity silicon for microwave applications. IEEE Microwave and Wireless Components Letters, 28(2), pp. 99-101. (doi: 10.1109/LMWC.2018.2790705)
|
Text
158631.pdf - Accepted Version 1MB |
Abstract
Novel MMIC spiral inductors on GaN-on-low-resistivity silicon (LR-Si) substrates ( σ<40 Ω⋅cm ) are demonstrated with enhanced self-resonance frequency ( fSRF ) and Q -factor. The developed technology improves inductor performance by suppressing substrate coupling effects using air-bridge technology above benzocyclobutene dielectric as an interface layer on the lossy substrate. A 0.83-nH spiral inductor with peak Q -factor enhancement of 57% ( Q=22 at 24 GHz) and maximum fSRF of 59 GHz was achieved because of the extra 5- μm elevation in air. An accurate broad-band model for the fabricated inductors has been developed and verified for further performance analysis up to 40 GHz. The proposed inductors utilize cost-effective, reliable, and MMIC-compatible technology for the realization of high-performance RF GaN-on-LR Si MMIC circuits for millimeter-wave applications.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Li, Dr Xu and Eblabla, Mr Abdalla and Elgaid, Dr Khaled |
| Authors: | Eblabla, A., Li, X., Wallis, D.J., Guiney, I., and Elgaid, K. |
| College/School: | College of Science and Engineering > School of Engineering |
| Journal Name: | IEEE Microwave and Wireless Components Letters |
| Publisher: | IEEE |
| ISSN: | 1531-1309 |
| ISSN (Online): | 1558-1764 |
| Published Online: | 23 January 2018 |
University Staff: Request a correction | Enlighten Editors: Update this record
Altmetric
Altmetric