High-performance MMIC inductors for GaN-on-low-resistivity silicon for microwave applications

Eblabla, A., Li, X. , Wallis, D.J., Guiney, I. and Elgaid, K. (2018) High-performance MMIC inductors for GaN-on-low-resistivity silicon for microwave applications. IEEE Microwave and Wireless Components Letters, 28(2), pp. 99-101. (doi: 10.1109/LMWC.2018.2790705)

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Novel MMIC spiral inductors on GaN-on-low-resistivity silicon (LR-Si) substrates ( σ<40 Ω⋅cm ) are demonstrated with enhanced self-resonance frequency ( fSRF ) and Q -factor. The developed technology improves inductor performance by suppressing substrate coupling effects using air-bridge technology above benzocyclobutene dielectric as an interface layer on the lossy substrate. A 0.83-nH spiral inductor with peak Q -factor enhancement of 57% ( Q=22 at 24 GHz) and maximum fSRF of 59 GHz was achieved because of the extra 5- μm elevation in air. An accurate broad-band model for the fabricated inductors has been developed and verified for further performance analysis up to 40 GHz. The proposed inductors utilize cost-effective, reliable, and MMIC-compatible technology for the realization of high-performance RF GaN-on-LR Si MMIC circuits for millimeter-wave applications.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Eblabla, Mr Abdalla and Elgaid, Dr Khaled
Authors: Eblabla, A., Li, X., Wallis, D.J., Guiney, I., and Elgaid, K.
College/School:College of Science and Engineering > School of Engineering
Journal Name:IEEE Microwave and Wireless Components Letters
ISSN (Online):1558-1764
Published Online:23 January 2018

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
698201Integration of RF Circuits with High Speed GaN Switching on Silicon SubstratesKhaled ElgaidEngineering and Physical Sciences Research Council (EPSRC)EP/N014820/1ENG - ENGINEERING ELECTRONICS & NANO ENG