Tensile Strained GeSn Mid-Infrared Light Emitters

Millar, R.W., Dumas, D.C.S., Gallacher, K., Jahandar, P., Myronov, M. and Paul, D.J. (2017) Tensile Strained GeSn Mid-Infrared Light Emitters. In: 2017 IEEE 14th International Conference on Group IV Photonics (GFP), Berlin, Germany, 23-25 Aug 2017, pp. 49-50. ISBN 9781509065677 (doi:10.1109/GROUP4.2017.8082190)

Millar, R.W., Dumas, D.C.S., Gallacher, K., Jahandar, P., Myronov, M. and Paul, D.J. (2017) Tensile Strained GeSn Mid-Infrared Light Emitters. In: 2017 IEEE 14th International Conference on Group IV Photonics (GFP), Berlin, Germany, 23-25 Aug 2017, pp. 49-50. ISBN 9781509065677 (doi:10.1109/GROUP4.2017.8082190)

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Abstract

Compressively strained GeSn alloys grown on Ge buffers on Si (001) substrates were fabricated into microdisks and strained using silicon nitride stressors. The strained disks are measured to be tensile by Raman spectroscopy, and demonstrate direct bandgap emission in the 3-5 μm gas sensing window.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Millar, Mr Ross and Paul, Professor Douglas and Dumas, Dr Derek and Gallacher, Dr Kevin
Authors: Millar, R.W., Dumas, D.C.S., Gallacher, K., Jahandar, P., Myronov, M., and Paul, D.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:1949-209X
ISBN:9781509065677
Copyright Holders:Copyright © 2017 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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