Thermally stable, high performance transfer doping of diamond using transition metal oxides

Crawford, K. G. , Qi, D., McGlynn, J., Ivanov, T. G., Shah, P. B., Weil, J., Tallaire, A., Ganin, A. Y. and Moran, D. A.J. (2018) Thermally stable, high performance transfer doping of diamond using transition metal oxides. Scientific Reports, 8, 3342. (doi: 10.1038/s41598-018-21579-4) (PMID:29463823) (PMCID:PMC5820251)

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Abstract

We report on optimisation of the environmental stability and high temperature operation of surface transfer doping in hydrogen-terminated diamond using MoO3 and V2O5 surface acceptor layers. In-situ annealing of the hydrogenated diamond surface at 400 °C was found to be crucial to enhance long-term doping stability. High temperature sheet resistance measurements up to 300 °C were performed to examine doping thermal stability. Exposure of MoO3 and V2O5 transfer-doped hydrogen-terminated diamond samples up to a temperature of 300 °C in ambient air showed significant and irreversible loss in surface conductivity. Thermal stability was found to improve dramatically however when similar thermal treatment was performed in vacuum or in ambient air when the oxide layers were encapsulated with a protective layer of hydrogen silsesquioxane (HSQ). Inspection of the films by X-ray diffraction revealed greater crystallisation of the MoO3 layers following thermal treatment in ambient air compared to the V2O5 films which appeared to remain amorphous. These results suggest that proper encapsulation and passivation of these oxide materials as surface acceptor layers on hydrogen-terminated diamond is essential to maximise their environmental and thermal stability.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Crawford, Kevin and Ganin, Dr Alexey and McGlynn, Miss Jessica and Moran, Dr David
Authors: Crawford, K. G., Qi, D., McGlynn, J., Ivanov, T. G., Shah, P. B., Weil, J., Tallaire, A., Ganin, A. Y., and Moran, D. A.J.
College/School:College of Science and Engineering > School of Chemistry
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Scientific Reports
Publisher:Nature Publishing Group
ISSN:2045-2322
ISSN (Online):2045-2322
Copyright Holders:Copyright © 2018 The Authors
First Published:First published in Scientific Reports 8:3342
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
450861Ultra short gate length diamond FETs for high power/high frequency applicationsDavid MoranEngineering and Physical Sciences Research Council (EPSRC)EP/E054668/1ENG - ENGINEERING ELECTRONICS & NANO ENG