Tuning the analog and digital performance of Germanene nanoribbon field effect transistors with engineering the width and geometry of source, channel and drain region in the ballistic regime

Fatholah nejad, H., Dideban, D., Ketabi, A., Vali, M., Bayani, A. H. and Heidari, H. (2018) Tuning the analog and digital performance of Germanene nanoribbon field effect transistors with engineering the width and geometry of source, channel and drain region in the ballistic regime. Materials Science in Semiconductor Processing, 80, pp. 18-23. (doi:10.1016/j.mssp.2018.02.007)

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Abstract

In this paper, with taking advantage of electrical properties of a germanene nanoribbon, we propose a germanene nanoribbon field effect transistor (GeNR-FET). Here by tuning the width and geometry of the germanene nanoribbon in the source, drain and channel regions, we investigate theoretically the transistor characteristics, analog and digital performances of these several different GeNR-FETs at room temperature. Our simulations are obtained usingdensity functional theory (DFT) combined withnon-equilibrium Green’s function (NEGF) method. The simulation results show that for digital applications, by tuning the width of the germanene nanoribbon a GeNR-FET with a finite band gap in the channel region and small band gap in the source and drain regions showsa better Ion/Ioff ratio in transfer characteristics. However, for the analog applications, if the band gap of the channel region has small value and the band gap of the source and drain regionshave a finite value, the output characteristic shows a higher peak to valley (PVR) ratio which is an important figure of merit in analog applications. Also from the output characteristics, we find that the T-shape channel shows more desirable (PVR) compared with otherdevices and it reaches to 17.28 in this case.

Item Type:Articles
Additional Information:This research was partially supported by University of Kashan under grant number 682615.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Heidari, Dr Hadi
Authors: Fatholah nejad, H., Dideban, D., Ketabi, A., Vali, M., Bayani, A. H., and Heidari, H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Materials Science in Semiconductor Processing
Publisher:Elsevier
ISSN:1369-8001
ISSN (Online):1873-4081
Published Online:16 February 2018
Copyright Holders:Copyright © 2018 Elsevier Ltd.
First Published:First published in Materials Science in Semiconductor Processing 80: 18-23
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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