Switching Properties of VAN LCoS Devices with Ultra-Microscale Electrodes

Ghannam, R. , Collings, N., Crossland, W., James, R., Day, S. and Fernandez, A. (2007) Switching Properties of VAN LCoS Devices with Ultra-Microscale Electrodes. In: SPIE Photonic Devices and Applications, San Diego, CA, USA, 26-30 Aug 2007, 66540R. (doi:10.1117/12.733228)

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Nanolithographic fabrication techniques may soon enable electrically-driven LCoS devices to be manipulated using ultra-nanoscale CMOS transistors. However, questions as to the switching properties of such LCoS devices arise due to the diminishing dimensions of their transistors. Thus, experimental investigations into the response times and the onset-threshold voltages for LCoS devices were embarked upon. Such measurements were obtained for various electrode dimensions and cell gaps. Furthermore, an interdigitated (IDT) electrode pattern was used to drive the homeotropically-aligned NLC material in a direction parallel to the bounding planes of the cell. Experimental findings revealed that faster response times were achieved when the electrode spacings were decreased. Such results have shown that a 10μm-thick device with an electrode pitch of 2μm can achieve a switch-on time of < 5ms. In addition, decreasing the electrode spacing results in the threshold voltage to drop. The results therefore indicate that improvements in a LCoS device's switching properties can be realised by using smaller electrode dimensions.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Ghannam, Dr Rami
Authors: Ghannam, R., Collings, N., Crossland, W., James, R., Day, S., and Fernandez, A.
College/School:College of Science and Engineering > School of Engineering

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