Bi2Te3 as an Active Material for MEMS Based Devices Fabricated at Room Temperature

Sedky, S., Kamal, A., Yomn, M., Bakr, H., Ghannam, R. , Leonov, V. and Fiorini, P. (2009) Bi2Te3 as an Active Material for MEMS Based Devices Fabricated at Room Temperature. In: International Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009, Denver, CO, 21-25 Jun 2009, pp. 1035-1038. ISBN 9781424441938 (doi:10.1109/SENSOR.2009.5285965)

Sedky, S., Kamal, A., Yomn, M., Bakr, H., Ghannam, R. , Leonov, V. and Fiorini, P. (2009) Bi2Te3 as an Active Material for MEMS Based Devices Fabricated at Room Temperature. In: International Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009, Denver, CO, 21-25 Jun 2009, pp. 1035-1038. ISBN 9781424441938 (doi:10.1109/SENSOR.2009.5285965)

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Abstract

This paper reports, for the first time, on the possibility of using thin films based on bismuth telluride (Bi-Te) alloys as a MEMS surface micromachined structural layer. Furthermore, it is also demonstrated for the first time that the thermoelectric properties of the deposited films can be optimized at room temperature. Developing this material at such low temperature is very attractive for realizing low cost, high performance, miniaturized energy harvesters that can replace batteries in low power applications such as autonomous sensors network, medical implants, pico satellites, etc.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ghannam, Dr Rami
Authors: Sedky, S., Kamal, A., Yomn, M., Bakr, H., Ghannam, R., Leonov, V., and Fiorini, P.
College/School:College of Science and Engineering > School of Engineering
ISBN:9781424441938

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