Loading Effect of W-band Resonant Tunneling Diode Oscillator by Using Load-Pull Measurement

Wang, J., Al-Khalidi, A. , Cornescu, A., Morariu, R. , Khalid, A.-u.-H. , Cumming, D. and Wasige, E. (2017) Loading Effect of W-band Resonant Tunneling Diode Oscillator by Using Load-Pull Measurement. CSW 2017, Berlin, Germany, 14-18 May 2017.

Abstract

Resonant tunneling diode (RTD) is the fastest solid-state electronic device with the highest reported frequency at 1.92 THz [1]. RTD-based THz sources have many promising applications such as ultrafast wireless communications, THz imaging, etc. To date, the main limitation of RTD technology is the low output power. Many efforts had been made to increase the power level by such as optimizing the layer structure [2], employing more devices in an array [3], matching impedance by displacing the device in circuit [3], etc. Here we report the loading effect by using E/H impedance tuner. We found that the maximum power is over 20dB higher than the worst impedance matching and the frequency shift is within 14% range of the central frequency. The load-pull measurement provides a convenient way to investigate the power/frequency variation versus the impedance change. Further work will benefit from the measurement results to design corresponding impedance matching network. The power level of RTD oscillator will be increased.

• Item Type: Conference or Workshop Item
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Wasige, Professor Edward and Cumming, Professor David and Morariu, Razvan and Wang, Dr Jue and Cornescu, Andrei and Khalid, Dr Ata-Ul-Habib and Al-Khalidi, Dr Abdullah
• Authors: Wang, J., Al-Khalidi, A., Cornescu, A., Morariu, R., Khalid, A.-u.-H., Cumming, D., and Wasige, E.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Copyright Holders: Copyright © 2017 The Authors
• Publisher Policy: Reproduced with the permission of the Authors