IV Characteristics of a Stabilized Resonant Tunnelling Diodes

Cornescu, A., Wang, J., Al-Khalidi, A. , Morariu, R. and Wasige, E. (2017) IV Characteristics of a Stabilized Resonant Tunnelling Diodes. CSW 2017, Berlin, Germany, 14-18 May 2017.

Cornescu, A., Wang, J., Al-Khalidi, A. , Morariu, R. and Wasige, E. (2017) IV Characteristics of a Stabilized Resonant Tunnelling Diodes. CSW 2017, Berlin, Germany, 14-18 May 2017.

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Abstract

The presence of parasitic oscillations found in the negative differential region (NDR), which can distort the current-voltage (I-V) characteristics of the device is one of the main problems when designing resonant tunnelling diode (RTD) circuits. A new method for RTD stabilization is proposed based on work done previously on tunnel diodes and results show that there is a significant difference between the I-V characteristics of a tunnel diode and that of an RTD. This work shows promising potential for further increasing the RTD’s output power, DC-RF conversion efficiency and provides the basis for an accurate model of the NDR region

Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Morariu, Razvan and Al-Khalidi, Dr Abdullah and Wang, Dr Jue and Cornescu, Andrei
Authors: Cornescu, A., Wang, J., Al-Khalidi, A., Morariu, R., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2017 The Authors
Publisher Policy:Reproduced with the permission of the Authors
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