Impedance Spectroscopy of Narrow Band Gap III-V MOS Systems

Hurley, P. K. et al. (2016) Impedance Spectroscopy of Narrow Band Gap III-V MOS Systems. SINANO-III-V-MOS-Compose3 Workshop, Lausanne, Switzerland, 12 Sep 2016.

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Publisher's URL: http://www.sinano.eu/sinano-iii-v-mos-compose3-workshop-2016/

Abstract

One of the main research challenges facing future developments in areas such as nano-electronics, energy storage, the Internet of Things and communications is the need to create devices which are more energy efficient. From the perspective of both energy efficiency, and the integration of RF functions on a silicon platform, there is a growing interest in the use of high electron mobility channels, such as In<sub>x</sub>Ga<sub>1-x</sub>As, in conjunction with high dielectric constant (high-<i>k</i>) gate oxides for <i>n</i>-channel Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) in FinFET structures and in 3D integration schemes. The understanding and control of electrically active defect states at the high-<i>k</i>/In<sub>x</sub>Ga<sub>1-x</sub>As interface will be essential for the successful implementation of high mobility channel materials in MOSFET or tunnel FET configurations. The objective of this presentation will be to provide an overview of the current understanding of the density and distribution of electrically active defects at the high-<i>k</i>/In<sub>x</sub>Ga<sub>1-x</sub>As interface, along with initial investigations of MOS structures on GaSb and InGaSb surfaces. This presentation will also consider the issue of capacitance-voltage (CV) hysteresis in high-<i>k</i>/InGaAs and high-<i>k</i>/(In)GaSb MOS structures, along with methods to reduce the level of hysteresis charge trapping instabilities. Finally, the characteristic signatures of capacitance and conductance, which indicate genuine surface inversion of a narrow energy gap III-V MOS structure in inversion will be discussed.

Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Millar, Mr David and Peralagu, Mr Uthayasankaran
Authors: Hurley, P. K., Monaghan, S., Cherkaoui, K., Djara, V., O'Connor, E., Gasper, G., Lin, J., Caruso, E., Millar, D., Peralagu, U., Thayne, I., Wernersson, L.-E., Lind, E., Greene, G., and Greer, J.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Micro- and Nanotechnology

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
0UNSPECIFIEDINVENTUNSPECIFIEDScience Foundation Ireland (SFI)UNSPECIFIEDUNSPECIFIED
634601Compose3Iain ThayneEuropean Commission (EC)619325ENG - ENGINEERING ELECTRONICS & NANO ENG
703781INSIGHTIain ThayneEuropean Commission (EC)688784ENG - ENGINEERING ELECTRONICS & NANO ENG