Simulating the dispersive behavior of semiconductors using the Lorentzian–Drude model for photovoltaic devices

Abdellatif, S., Ghannam, R. and Khalil, A. S. G. (2014) Simulating the dispersive behavior of semiconductors using the Lorentzian–Drude model for photovoltaic devices. Applied Optics, 53(15), pp. 3294-3300. (doi:10.1364/AO.53.003294) (PMID:24922218)

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Abstract

Unique light-trapping structures that improve the efficiency of thin-film solar cells require advanced computational methods that can simulate the propagation of light through the thickness of each material in the solar cell. The simulations community that uses the Lorentz–Drude (LD) model cannot precisely simulate the propagation of light through the entire spectrum of the Sun, due to the difficulty in extrapolating the coefficients of each solar cell material. In this paper, a new technique for modeling dispersive and absorptive material over the Sun’s entire wavelength range (200–1700 nm) using the LD model is suggested. The new numerical models are used for simulating light propagation through various one-dimensional light-trapping structures, including metal backreflectors and distributed Bragg reflectors. All the numerical simulation results show agreement with previously published theoretical and experimental results. The proposed simulation technique will help the simulations community in using the LD model to simulate the propagation of light in solar cells more accurately.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Ghannam, Dr Rami
Authors: Abdellatif, S., Ghannam, R., and Khalil, A. S. G.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Applied Optics
Publisher:Optical Society of America
ISSN:0003-6935
ISSN (Online):0003-6935
Published Online:19 March 2014

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