Gareev, R.R., Weides, M. , Schreiber, R. and Poppe, U. (2006) Resonant tunneling magnetoresistance in antiferromagnetically coupled Fe-based structures with multilayered Si/Ge spacers. Applied Physics Letters, 88(17), 172105. (doi: 10.1063/1.2198812)
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Abstract
We report on the experimental evidence of the tunneling magnetoresistance (TMR) effect near 3% and its inversion in strongly antiferromagnetically coupled Fe(001)∕([Si(0.2nm)∕Ge(0.2nm)]∗5)/FeFe(001)∕([Si(0.2nm)∕Ge(0.2nm)]*5)∕Fe epitaxial structures with diffused interfaces. We explain the inversion of TMR with biasing voltage by resonant tunneling across impurity states with weak spin split ΔE∼10meVΔE∼10meV and spin-dependent filtering in the spacer layer. The resonant tunneling is manifested in spin-dependent resonances close to zero biasing voltages related to antiferromagnetic coupling across impurity states.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Weides, Professor Martin |
| Authors: | Gareev, R.R., Weides, M., Schreiber, R., and Poppe, U. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | AIP Publishing |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
| Published Online: | 24 April 2006 |
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