Resonant tunneling magnetoresistance in antiferromagnetically coupled Fe-based structures with multilayered Si/Ge spacers

Gareev, R.R., Weides, M. , Schreiber, R. and Poppe, U. (2006) Resonant tunneling magnetoresistance in antiferromagnetically coupled Fe-based structures with multilayered Si/Ge spacers. Applied Physics Letters, 88(17), 172105. (doi:10.1063/1.2198812)

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Abstract

We report on the experimental evidence of the tunneling magnetoresistance (TMR) effect near 3% and its inversion in strongly antiferromagnetically coupled Fe(001)∕([Si(0.2nm)∕Ge(0.2nm)]∗5)/FeFe(001)∕([Si(0.2nm)∕Ge(0.2nm)]*5)∕Fe epitaxial structures with diffused interfaces. We explain the inversion of TMR with biasing voltage by resonant tunneling across impurity states with weak spin split ΔE∼10meVΔE∼10meV and spin-dependent filtering in the spacer layer. The resonant tunneling is manifested in spin-dependent resonances close to zero biasing voltages related to antiferromagnetic coupling across impurity states.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Weides, Professor Martin
Authors: Gareev, R.R., Weides, M., Schreiber, R., and Poppe, U.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN:0003-6951
ISSN (Online):1077-3118
Published Online:24 April 2006

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