Resistive switching of rose bengal devices: a molecular effect?

Karthäuser, S., Lüssem, B., Weides, M. , Alba, M., Besmehn, A., Oligschlaeger, R. and Waser, R. (2006) Resistive switching of rose bengal devices: a molecular effect? Journal of Applied Physics, 100(9), 094504. (doi:10.1063/1.2364036)

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Abstract

The resistive switching behavior of devices consisting of aluminum top electrode, molecular layer (rose bengal), and bottom electrode (zinc oxide and indium tin oxide) is examined. By measuring the current versus voltage dependence of these devices for various frequencies and by systematically varying the composition of the device, we show that the switching is an extrinsic effect that is not primarily dependent on the molecular layer. It is shown that the molecular layer is short circuited by filaments of either zinc oxide or aluminum and that the switching effect is due to a thin layer of aluminum oxide at the zinc oxide/aluminum interface.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Weides, Professor Martin
Authors: Karthäuser, S., Lüssem, B., Weides, M., Alba, M., Besmehn, A., Oligschlaeger, R., and Waser, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Applied Physics
Publisher:AIP Publishing
ISSN:0021-8979
ISSN (Online):1089-7550
Published Online:06 November 2006

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