Wafer scale transfer of ultrathin silicon chips on flexible substrates for high performance bendable systems

Navaraj, W. T., Gupta, S., Lorenzelli, L. and Dahiya, R. (2018) Wafer scale transfer of ultrathin silicon chips on flexible substrates for high performance bendable systems. Advanced Electronic Materials, 4(4), 1700277. (doi: 10.1002/aelm.201700277)

[img]
Preview
Text
156093.pdf - Accepted Version

5MB

Abstract

This paper presents an innovative approach for wafer scale transfer of ultrathin silicon chips on flexible substrates. The methodology is demonstrated with various devices (ultrathin chip resistive samples, metal oxide semiconductor (MOS) capacitors and n‐channel metal oxide semiconductor field effect transistors (MOSFETs)) on wafers up to 4″ diameter. This is supported by extensive electromechanical characterization and theoretical analysis, including finite element simulation, to evaluate the effect of bending and the critical breaking radius of curvature. The ultrathin chips on polyimide did not break until the radius of curvature of 1.437 mm. In the case of MOS capacitors the measured capacitance increases with increase in bending load. The changes in the transfer and output characteristics of ultrathin MOSFETs closely match with the theoretical model utilizing empirically determined parameters. Overall, the work demonstrates the efficacy of the new methodology presented here for wafer scale transfer of ultrathin chips on flexible substrates. The presented research will be useful for obtaining high performance and compact circuits needed in many futuristic flexible electronics applications such as implantable electronics and flexible displays. Further, it will open new avenues for realizing multilayered multimaterial (foil‐to‐foil) integrated bendable electronics.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Gupta, Mr Shoubhik and Dahiya, Professor Ravinder and Navaraj, Mr William
Authors: Navaraj, W. T., Gupta, S., Lorenzelli, L., and Dahiya, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Advanced Electronic Materials
Publisher:Wiley
ISSN:2199-160X
ISSN (Online):2199-160X
Published Online:01 March 2018
Copyright Holders:Copyright © 2018 Wiley-VCH Verlag GmbH & Co.
First Published:First published in Advanced Electronic Materials 4(4): 1700277
Publisher Policy:Reproduced in accordance with the publisher copyright policy

University Staff: Request a correction | Enlighten Editors: Update this record

Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
682141CONTESTRavinder DahiyaEuropean Commission (EC)317488ENG - ENGINEERING ELECTRONICS & NANO ENG
663861Engineering Fellowships for Growth: Printed Tactile SKINRavinder DahiyaEngineering and Physical Sciences Research Council (EPSRC)EP/M002527/1ENG - ENGINEERING ELECTRONICS & NANO ENG
659051Flexible Electronics Device Modelling (FLEXELDEMO)Ravinder DahiyaEngineering and Physical Sciences Research Council (EPSRC)EP/M002519/1ENG - ENGINEERING ELECTRONICS & NANO ENG