A Novel Dual-Layered Electrolytic Resistance Memory with Enhanced Retention

Soni, R., Schindler, C., Weides, M. , Rudiger, A., Kugeler, C. and Waser, R. (2008) A Novel Dual-Layered Electrolytic Resistance Memory with Enhanced Retention. In: 8th IEEE Conference on Nanotechnology, Arlington, TX, USA, 18-21 Aug 2008, pp. 764-766. ISBN 9781424421039 (doi:10.1109/NANO.2008.228)

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A novel dual-layered electrolytic resistance memory is proposed and its high retention ability at room and elevated temperature is successfully demonstrated. This dual-layered memory cell was fabricated as cross-point structure with active material, Cu containing Ge0.3Se0.7 based solid electrolyte and a thin insulator layer stack, sandwiched between an inert Pt bottom electrode and an oxidizable Cu top electrode. The reduction of the cell programming current up to few nA achieved with this dual- layered memory cell is promising for low power consumption applications.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Weides, Professor Martin
Authors: Soni, R., Schindler, C., Weides, M., Rudiger, A., Kugeler, C., and Waser, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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