Ultra-low Current Resistive Memory Based on Cu-SiO2

Schindler, C., Weides, M. , Kozicki, M. N. and Waser, R. (2010) Ultra-low Current Resistive Memory Based on Cu-SiO2. In: 2008 IEEE Silicon Nanoelectronics Workshop, Honolulu, HI, USA, 15-16 Jun 2008, ISBN 9781424420711 (doi:10.1109/SNW.2008.5418475)

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Ultra-low current resistive switching in sputtered Cu/SiO2/Pt and Cu/SiO2/Ir structures was investigated. Both Cu and SiO2 are commonplace in silicon integrated circuits and hence the material system is CMOS compatible. The switching characteristics were very similar to those observed in other solid electrolytes so that the mechanism is assumed to be the same, i.e., based on the formation and rupture of a nanoscale Cu filament. The first current voltage sweep serves as a forming step with write currents as low as 10nA. In the subsequent cycles, the write currents could be reduced to as little as 10pA, making this technology an ideal candidate for energy-starved applications. The switching voltage scaled with the delay time of the current-voltage sweep.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Weides, Professor Martin
Authors: Schindler, C., Weides, M., Kozicki, M. N., and Waser, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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