Multi-subband Ensemble Monte Carlo Study of Tunneling Leakage mechanisms

Medina-Bailon, C., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Gamiz, F., Sadi, T., Georgiev, V. and Asenov, A. (2017) Multi-subband Ensemble Monte Carlo Study of Tunneling Leakage mechanisms. In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7-9 Sept 2017, pp. 281-284. ISBN 9784863486102 (doi:10.23919/SISPAD.2017.8085319)

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Abstract

The reduction of the critical dimensions of transistor architectures makes mandatory the inclusion of quantum effects different than standard confinement becomes in advanced device simulators to describe the electrical behavior. In particular, direct tunneling from source to drain, band-to-band tunneling and gate leakage mechanisms considering direct and trap assisted tunneling are of especial interest. This work presents a study of these inmechanisms in Fully Depleted Silicon-On- Insulator (FDSOI) and FinFET devices using a Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Georgiev, Dr Vihar and Sadi, Dr Toufik
Authors: Medina-Bailon, C., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Gamiz, F., Sadi, T., Georgiev, V., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:1946-1577
ISBN:9784863486102
Published Online:26 October 2017
Copyright Holders:Copyright © 2017 The Japan Society of Applied Physics
First Published:First published in 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD): 281-284
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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