AlN/GaN HEMTs with SiN Passivation and Recessed Ohmics

Al-Khalidi, A. , Taking, S. and Wasige, E. (2012) AlN/GaN HEMTs with SiN Passivation and Recessed Ohmics. 6th Wide Band Gap Semiconductors and Components Workshop, Noordwijk, Netherlands, 8-9 Oct 2012.

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We report the fabrication of good performing SiN/AlN/GaN MIS-HEMT devices with maximum drain current density, IDS, of 1.9A/mm. Compared to the same devices on SiN/AlGaN/GaN MIS-HEMT structure, these have superior performance. This is achieved by recessing the Ohmic contacts to lower the contact resistance. These devices employ a 10nm PECVD deposited SiN dielectric layer under the gate to reduce the leakage current. This paper will compare the DC performance of AlGaN/GaN and AlN/GaN HEMTs employing SiN passivation and recessed Ohmic contacts. We will also comment on the performance of RF devices on AlGaN/GaN material.

Item Type:Conference or Workshop Item
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Al-Khalidi, Dr Abdullah
Authors: Al-Khalidi, A., Taking, S., and Wasige, E.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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