Al-Khalidi, A. , Taking, S. and Wasige, E. (2012) AlN/GaN HEMTs with SiN Passivation and Recessed Ohmics. 6th Wide Band Gap Semiconductors and Components Workshop, Noordwijk, Netherlands, 8-9 Oct 2012.
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Abstract
We report the fabrication of good performing SiN/AlN/GaN MIS-HEMT devices with maximum drain current density, IDS, of 1.9A/mm. Compared to the same devices on SiN/AlGaN/GaN MIS-HEMT structure, these have superior performance. This is achieved by recessing the Ohmic contacts to lower the contact resistance. These devices employ a 10nm PECVD deposited SiN dielectric layer under the gate to reduce the leakage current. This paper will compare the DC performance of AlGaN/GaN and AlN/GaN HEMTs employing SiN passivation and recessed Ohmic contacts. We will also comment on the performance of RF devices on AlGaN/GaN material.
Item Type: | Conference or Workshop Item |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Wasige, Professor Edward and Al-Khalidi, Dr Abdullah |
Authors: | Al-Khalidi, A., Taking, S., and Wasige, E. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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