AlN/GaN HEMT Technology with In-situ SiNx Passivation

Al-Khalidi, A. , Khalid, A. and Wasige, E. (2015) AlN/GaN HEMT Technology with In-situ SiNx Passivation. In: 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Glasgow, Scotland, 29 Jun - 02 Jul 2015, pp. 251-253. ISBN 9781479982295 (doi: 10.1109/PRIME.2015.7251382)

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We report on the fabrication of low resistance Ohmic contacts on AlN/GaN HEMT material terminated with in-situ SiNx. The AlN/GaN material was grown on SiC substrate using metal organic chemical vapor deposition (MOCVD), and employs a 5nm in-situ SiNx layer to reduce the cracking of the highly stressed AlN layer. A low Ohmic contact resistance of 0.4 .mm was achieved, and this is one of the lowest reported values. 2×200 μm finger AlN/GaN HEMT devices exhibited a maximum drain current density, IDSS, of 700 mA/mm, which in comparison with standard AlGaN/GaN HEMT devices (on SiC) was at least 2× higher.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Khalid, Dr Ata-Ul-Habib and Al-Khalidi, Dr Abdullah
Authors: Al-Khalidi, A., Khalid, A., and Wasige, E.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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