Photoluminescent, wide-bandgap a-SiC:H alloy films deposited by Cat-CVD using acetylene

Kumbhar, A., Patil, S. B. , Kumar, S., Lal, R. and Dusane, R.O. (2011) Photoluminescent, wide-bandgap a-SiC:H alloy films deposited by Cat-CVD using acetylene. Thin Solid Films, 395(1-2), pp. 244-248. (doi:10.1016/S0040-6090(01)01263-9)

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Abstract

Hydrogenated amorphous silicon/carbon films (a-Si-C:H) are deposited from a silane and acetylene gas mixture by the catalytic chemical vapour deposition (Cat-CVD) technique. It is observed that under certain conditions of total gas pressure and filament temperature (TF), the optical bandgap varies non-linearly with the acetylene to silane (C2H2/SiH4) ratio, having a maximum value of 3.6 eV for a C2H2/SiH4 ratio ≥0.8. However, the deposition rate drastically reduces with an increase in acetylene fraction. FTIR spectra indicate that the total hydrogen content is lower compared to samples deposited by PECVD using similar gas mixtures, with hydrogen being preferentially attached to carbon rather than silicon atoms. The photoluminescence (PL) spectra of these films show PL in the visible spectral region at room temperature. The films with larger bandgap (>2.5 eV) exhibit PL at room temperature, with the emission having peak energy in the range 2.0–2.3 eV.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Patil, Dr Samadhan
Authors: Kumbhar, A., Patil, S. B., Kumar, S., Lal, R., and Dusane, R.O.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Thin Solid Films
Publisher:Elsevier
ISSN:0040-6090
ISSN (Online):1879-2731
Published Online:28 September 2001

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