Memory cell based on a φ Josephson junction

Goldobin, E., Sickinger, H., Weides, M. , Ruppelt, N., Kohlstedt, H., Kleiner, R. and Koelle, D. (2013) Memory cell based on a φ Josephson junction. Applied Physics Letters, 102(24), 242602. (doi:10.1063/1.4811752)

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The φ Josephson junction has a doubly degenerate ground state with the Josephson phases ±φ±φ. We demonstrate the use of such a φ Josephson junction as a memory cell (classical bit), where writing is done by applying a magnetic field and reading by applying a bias current. In the “store” state, the junction does not require any bias or magnetic field, but just needs to stay cooled for permanent storage of the logical bit. Straightforward integration with rapid single flux quantum logic is possible.

Item Type:Articles
Additional Information:We acknowledge financial support by the DFG (via SFB/TRR-21, project A5 as well via project GO-1106/3). H.S. gratefully acknowledges support by the Evangelisches Studienwerk e.V. Villigst.
Glasgow Author(s) Enlighten ID:Weides, Professor Martin
Authors: Goldobin, E., Sickinger, H., Weides, M., Ruppelt, N., Kohlstedt, H., Kleiner, R., and Koelle, D.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:AIP Publishing
ISSN (Online):1077-3118
Published Online:20 June 2013

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