Suppression of Boron Penetration by Hot Wire CVD Polysilicon

Vairagar, A.V., Patil, S.B. and Pete, D.J. (2002) Suppression of Boron Penetration by Hot Wire CVD Polysilicon. In: 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2002), Singapore, 8-12 July 2002, pp. 223-226. ISBN 0780374169 (doi: 10.1109/IPFA.2002.1025667)

Abstract

In the current and future deep sub-micron technologies, boron penetration through the gate dielectric is a severe reliability concern for the dual gate CMOS technology. In this paper we report results of our attempts to exploit the potential of Hot Wire CVD (HWCVD) for depositing poly-Si gate for CMOS technology. The effect of grain size of poly-Si gate on boron penetration is studied by varying the poly-Si grain size through variation in the HWCVD parameters.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Patil, Dr Samadhan
• Authors: Vairagar, A.V., Patil, S.B., and Pete, D.J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISBN: 0780374169