Suppression of Boron Penetration by Hot Wire CVD Polysilicon

Vairagar, A.V., Patil, S.B. and Pete, D.J. (2002) Suppression of Boron Penetration by Hot Wire CVD Polysilicon. In: 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2002), Singapore, 8-12 July 2002, pp. 223-226. ISBN 0780374169 (doi:10.1109/IPFA.2002.1025667)

Full text not currently available from Enlighten.


In the current and future deep sub-micron technologies, boron penetration through the gate dielectric is a severe reliability concern for the dual gate CMOS technology. In this paper we report results of our attempts to exploit the potential of Hot Wire CVD (HWCVD) for depositing poly-Si gate for CMOS technology. The effect of grain size of poly-Si gate on boron penetration is studied by varying the poly-Si grain size through variation in the HWCVD parameters.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Patil, Dr Samadhan
Authors: Vairagar, A.V., Patil, S.B., and Pete, D.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

University Staff: Request a correction | Enlighten Editors: Update this record