Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons

Shangina, E.L., Smirnov, K.V., Morozov, D.V. , Kovalyuk, V.V., Gol'tsman, G.N., Verevkin, A.A. and Toropov, A.I. (2010) Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons. Semiconductors, 44(11), pp. 1427-1429. (doi:10.1134/S1063782610110096)

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Abstract

The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f3 dB) is varied from 150 to 250 MHz with a change in the concentration ns according to the power law f3dB ∝ ns−0.5 due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K). Original Russian Text © E.L. Shangina, K.V. Smirnov, D.V. Morozov, V.V. Kovalyuk, G.N. Gol’tsman, A.A. Verevkin, A.I. Toropov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 11, pp. 1475–1477.

Item Type:Articles (Letter)
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Morozov, Dr Dmitry
Authors: Shangina, E.L., Smirnov, K.V., Morozov, D.V., Kovalyuk, V.V., Gol'tsman, G.N., Verevkin, A.A., and Toropov, A.I.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Semiconductors
Publisher:SP MAIK Nauka/Interperiodica
ISSN:1063-7826
ISSN (Online):1090-6479
Published Online:19 November 2010

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