Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements

Shangina, E.L., Smirnov, K.V., Morozov, D.V. , Kovalyuk, V.V., Goltsman, G.N., Verevkin, A.A., Toropov, A.I. and Mauskopf, P. (2011) Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements. Semiconductor Science and Technology, 26(2), 025013. (doi:10.1088/0268-1242/26/2/025013)

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Abstract

We present measurements of the energy relaxation time, τε, of electrons in a single AlGaAs/GaAs heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Morozov, Dr Dmitry
Authors: Shangina, E.L., Smirnov, K.V., Morozov, D.V., Kovalyuk, V.V., Goltsman, G.N., Verevkin, A.A., Toropov, A.I., and Mauskopf, P.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Semiconductor Science and Technology
Publisher:IOP Publishing
ISSN:0268-1242
ISSN (Online):1361-6641
Published Online:24 December 2010

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