Shangina, E.L., Smirnov, K.V., Morozov, D.V. , Kovalyuk, V.V., Goltsman, G.N., Verevkin, A.A., Toropov, A.I. and Mauskopf, P. (2011) Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements. Semiconductor Science and Technology, 26(2), 025013. (doi: 10.1088/0268-1242/26/2/025013)
Full text not currently available from Enlighten.
Abstract
We present measurements of the energy relaxation time, τε, of electrons in a single AlGaAs/GaAs heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.
Item Type: | Articles |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Morozov, Dr Dmitry |
Authors: | Shangina, E.L., Smirnov, K.V., Morozov, D.V., Kovalyuk, V.V., Goltsman, G.N., Verevkin, A.A., Toropov, A.I., and Mauskopf, P. |
Subjects: | Q Science > QC Physics |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Semiconductor Science and Technology |
Publisher: | IOP Publishing |
ISSN: | 0268-1242 |
ISSN (Online): | 1361-6641 |
Published Online: | 24 December 2010 |
University Staff: Request a correction | Enlighten Editors: Update this record