Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films

Kardakova, A.I., Coumou, P.C.J.J., Finkel, M.I., Morozov, D.V. , An, P.P., Goltsman, G.N. and Klapwijk, T.M. (2015) Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films. IEEE Transactions on Applied Superconductivity, 25(3), 2400404. (doi:10.1109/TASC.2014.2364516)

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Abstract

We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τeph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T −3 temperature dependence, which are consistent with values of τeph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Morozov, Dr Dmitry
Authors: Kardakova, A.I., Coumou, P.C.J.J., Finkel, M.I., Morozov, D.V., An, P.P., Goltsman, G.N., and Klapwijk, T.M.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Quantum Sensors
Journal Name:IEEE Transactions on Applied Superconductivity
Publisher:IEEE
ISSN:1051-8223
ISSN (Online):1558-2515
Published Online:22 October 2014

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