Revisiting the B-factor variation in a-SiC:H deposited by HWCVD

Swain, B. P., Patil, S. B. , Kumbhar, A. and Dusane, R.O. (2003) Revisiting the B-factor variation in a-SiC:H deposited by HWCVD. Thin Solid Films, 430(1-2), pp. 186-188. (doi:10.1016/S0040-6090(03)00107-X)

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In order to understand material properties in a better way, it is always desirable to come up with new variables that might be related to the film properties. The B-parameter is such a variable, which relates to the quality of a-SiC:H films both in terms of electronic and optical properties. B (scaling factor) is essentially the slope of the straight-line part of the (αE)1/2–E (Tauc plot). Due to dependence on a large number of parameters and no detailed research, many previous authors have surmised that B has an ambiguous correlation with carbon content. We have made an attempt to establish the relation between the B-parameter as a quality-indicating factor of a-SiC:H films in both carbon- and silicon-rich material. For this we studied a-SiC:H films deposited by the HWCVD method with broad deposition parameters of substrate temperature (Ts), filament temperature (TF) and C2H2 fraction. Our results indicate that the B-parameter varies considerably with process conditions such as TF, total gas pressure and carbon content. An attempt is made to correlate the B-parameter with an opto-electronic parameter, such as the mobility edge, which has relevance to the device-quality aspects of a-SiC:H films prepared by HWCVD.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Patil, Dr Samadhan
Authors: Swain, B. P., Patil, S. B., Kumbhar, A., and Dusane, R.O.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Thin Solid Films
ISSN (Online):1879-2731
Published Online:08 April 2003

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