Preliminary results on a-SiC:H based thin film light emitting diode by hot wire CVD

Patil, S. B. , Kumbhar, A. A., Saraswat, S. and Dusane, R.O. (2003) Preliminary results on a-SiC:H based thin film light emitting diode by hot wire CVD. Thin Solid Films, 430(1-2), pp. 257-260. (doi:10.1016/S0040-6090(03)00122-6)

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Preliminary results on the first hot wire deposited a-SiC:H based thin film light emitting p–i–n diode having the structure glass/TCO(SnO2:F)/p-a-SiC:H/i-SiC:H/n-a-SiC:H/Al are reported. The paper discusses the results of our attempts to optimize the p-, i- and the n-layers for the desired electrical and optical properties. The optimized p-layers have a bandgap Eg∼2 eV and conductivity a little lower than 10−5 (Ω cm)−1. On the other hand, the optimized n-type a-SiC:H show a conductivity of ∼10−4 (Ω cm)−1 with bandgap 2.06 eV. The highest bandgap of the intrinsic layer is approximately 3.4 eV and shows room temperature photoluminescence peak at approximately 2.21 eV. Thin film p–i–n diodes having i-layers with Eg from 2.7 to 3.4 eV show white light emission at room temperature under forward bias of >5 V. However, the 50-nm thick devices show appreciable reverse leakage current and a low emission intensity, which we attribute to the contamination across the p–i interface since these devices are made in a single chamber with the same filament.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Patil, Dr Samadhan
Authors: Patil, S. B., Kumbhar, A. A., Saraswat, S., and Dusane, R.O.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Thin Solid Films
ISSN (Online):1879-2731
Published Online:08 April 2003

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